all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 8 rev. 02.1, 2016-06-22 pxfc191507fc thermally-enhanced high power rf ldmos fet 150 w, 28 v, 1805 C 1990 mhz description the pxfc191507fc is a 150-watt ldmos fet intended for use in multi-standard cellular power amplifer applications in the 1805 to 1990 mhz frequency band. features include input and output matching, high gain and thermally-enhanced package with earless fanges. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. pxfc191507fc package h-37248g-4/2 rf characteristics two-carrier wcdma specifcations (tested in infneon production test fxture) v dd = 28 v, i dq = 960 ma, p out = 32 w avg, ? 1 = 1980 mhz, ? 2 = 1990 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 19 20.5 db drain effciency h d 29 31 % intermodulation distortion imd C33 C31 dbc features ? broadband internal input and output matching ? typical pulsed cw performance, 1990 mhz, 28 v, 10 s pulse width, 10% duty cycle, class ab test - output power at p 1db = 140 w - effciency = 54% - gain = 19.5 db ? typical single-carrier wcdma performance, 1990 mhz, 28 v, 10 db par @ 0.01% ccdf, test model 1 with 16dpch - output power = 32 w avg - effciency = 34% - gain = 20 db - acpr = C31 dbc@ 5 mhz ? capable of handling 10:1 vswr @28 v, 150 w (cw) output power ? integrated esd protection : human body model, class 1c (per jesd22-a114) ? low thermal resistance ? pb-free and rohs compliant 0 10 20 30 40 50 60 16 17 18 19 20 21 22 29 33 37 41 45 49 53 efficiency (%) gain (db) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 960 ma, v gs = 2.65 v, ? = 1990 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz gain efficiency c191507fc_g1
data sheet 2 of 8 rev. 02.1, 2016-06-22 pxfc191507fc dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 0.05 1 a v ds = 63 v, v gs = 0 v i dss 10 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.05 w operating gate voltage v ds = 26 v, i dq = 960 ma v gs 2.3 2.6 2.9 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 140 w cw) r qjc 0.43 c/w ordering information type and version order code package description shipping pxfc191507fc v1 r0 pxfc191507fcv1r0xtma1 h-37248g-4/2, earless fange tape & reel, 50 pcs pxfc191507fc v1 r250 PXFC191507FCV1R250XTMA1 h-37248g-4/2, earless fange tape & reel, 250 pcs
pxfc191507fc data sheet 3 of 8 rev. 02.1, 2016-06-22 typical performance (data taken in a production test fxture) 0 10 20 30 40 50 60 -65 -55 -45 -35 -25 -15 -5 29 33 37 41 45 49 53 efficiency (%) imd & acpr (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 960 ma, v gs = 2.65 v, ? = 1990 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz imd low imd up acpr efficiency c191507fc_g2 -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 imd (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 960 ma, v gs = 2.65v, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 1930 imdl 1930 imdu 1960 imdl 1960 imdu 1990 imdl c191507fc_g3 0 10 20 30 40 50 60 16 17 18 19 20 21 22 30 35 40 45 50 55 efficiency (%) gain (db) output power (dbm) pulsed cw performance v dd = 28 v, i dq = 960 ma 1930 gain 1960 gain 1990 gain 1930 eff 1960 eff 1990 eff gain efficiency c191507fc_g4 0 10 20 30 40 50 60 16 17 18 19 20 21 22 27 32 37 42 47 52 57 efficiency (%) gain (db) output power (dbm) pulsed cw performance at various v dd i dq = 960 ma, ? = 1990 mhz gain efficiency c191507fc_g5 v dd = 24 v gain v dd = 28 v gain v dd = 32 v gain v dd = 24 v eff v dd = 28 v eff v dd = 32 v eff
data sheet 4 of 8 rev. 02.1, 2016-06-22 pxfc191507fc typical performance (cont.) broadband circuit impedance z source z load g s d load pull performance main side load pull performance C pulsed cw signal: 100 s, 10% duty cycle, v dd = 28 v, i dq = 960 ma p 1db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 1805 1.00 C j3.39 1.36 C j2.81 18.2 52.30 170 58.1 2.82 C j2.46 20.4 50.40 110 65.7 1880 1.38 C j3.80 1.26 C j3.35 17.8 52.10 164 54.7 2.48 C j2.33 20.2 50.50 112 64.8 1930 1.88 C j4.65 1.14 C j3.38 17.6 52.10 162 52.1 2.25 C j2.06 20.1 50.20 104 63.7 1990 2.85 C j4.62 1.31 C j3.40 18.4 52.00 157 56.4 1.81 C j2.40 19.9 50.60 116 62.8 freq [mhz] z source w z load w r jx r jx 1930 1.34 C4.30 1.55 C3.14 1960 1.28 C4.15 1.54 C2.99 1990 1.25 C4.04 1.52 C2.86 -25 -20 -15 -10 -5 0 17 18 19 20 21 22 1800 1850 1900 1950 2000 2050 2100 input return loss (db) gain (db) frequency (mhz) small signal cw performance gain & input return loss v dd = 28 v, i dq = 960 ma irl gain c191507fc_g6
pxfc191507fc data sheet 5 of 8 rev. 02.1, 2016-06-22 reference circuit , 1930 C 1990 mhz reference circuit assembly diagram (not to scale) + pxfc191507 fc_in_01 c102 rf_in ro4350, .020 rf_out s 1 s 3 s 2 v dd c 1 9 1 5 0 7 f c _ c d _ 0 8 - 2 6 - 2 0 1 4 c101 c103 c105 c104 c106 r 102 r 101 c205 c204 c206 c208 c207 c209 r 802 r 801 r 803 r 805 r 804 c202 c201 c203 ro4350, .020 (61 ) c210 c211 pxfc191507fc_out_01 (61) c801 c803 c802 c213 c214 c 212 v dd
data sheet 6 of 8 rev. 02.1, 2016-06-22 pxfc191507fc reference circuit (cont.) reference circuit assembly dut pxfc191507fc v1 test fixture part no. ltn/pxfc191507fc v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 1930 C 1990 mhz find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower components information component description suggested manufacturer p/n input c101, c104, c105, capacitor, 33 pf atc atc800a330jt250 c102, c106 capacitor, 10 f taiyo yuden umk325c7106mm-t c103 capacitor, 1.0 pf atc atc800a1r0bt250 c801, c802, c803 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101, r102, r805 capacitor, 10 ohms panasonic electronic components erj-8geyj100v r801 resistor, 1200 ohm panasonic electronic components erj-3geyj122v r802 resistor, 1300 ohm panasonic electronic components erj-3geyj132v r803, r804 capacitor, 100 ohms panasonic electronic components erj-8geyj101v s1 transistor infneon technologies bcp56 s2 potentiometer, 2k w bourns inc. 3224w-1-202e s3 voltage regulator texas instruments lm7805 output c201, c202, c203, c204, c205, c206, c207, c208 capacitor, 10 f taiyo yuden umk325c7106mm-t c209, c210 capacitor, 220 f panasonic electronic components eee-fp1v221ap c211, c212, c213 capacitor, 0.3 pf atc atc800a0r3bt250 c214 capacitor, 33 pf atc atc800a330jt250
pxfc191507fc data sheet 7 of 8 rev. 02.1, 2016-06-22 package outline specifcations package h-37248g-4/2 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower h - 37248 g - 4 / 2 _sl _01 _04 - 17 - 2013 s ( 16. 76 [. 660 ]) 9.78 [.385] 2x 15 . 72 [. 619 ] 1. 02 [. 040 ] 20 . 57 [. 810 ] sph 1.57 [.062 ] 3.760.25 [.148.010] 4x r0.51 +0.38 -0.13 [ r.020 +.015 -.005 ] 4x 3.490.20 [.138.008] 19. 81 0.20 [. 780 . 008 ] 21 . 72 [. 855 ] 2x 50 2x 2 . 29 [. 090 ] 3. 00 [. 118 ] c l c l c l c l c l c l c l g d v v c l 45 x 0.64 [.025 ] d diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source; v C v dd . 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
|
